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1

Dynamics and control of recombination process at semiconductor surfaces, interfaces and nano-structures

Hideki Hasegawa, Taketomo Sato, Seiya Kasai, Boguslawa Adamowicz, Tamotsu Hashizume

Journal:

Year:

2006

Language:

english

File:

PDF, 331 KB

english, 2006

2

A novel III–V semiconductor material for NO2 detection and monitoring

Katarzyna Wierzbowska, Luc Bideux, Boguslawa Adamowicz, Alain Pauly

Journal:

Sensors and Actuators A: Physical

Year:

2008

Language:

english

File:

PDF, 247 KB

english, 2008

3

Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface Recombination Velocity

Adamowicz, Boguslawa, Hasegawa, Hideki

Journal:

Japanese Journal of Applied Physics

Year:

1998

File:

PDF, 1.05 MB

1998

4

The influence of interface states and bulk carrier lifetime on the minority carrier behavior in an illuminated metal/insulator/GaN structure

Marcin Miczek, Piotr Bidziński, Bogusława Adamowicz, Chihoko Mizue, Tamotsu Hashizume

Journal:

Solid State Communications

Year:

2011

Language:

english

File:

PDF, 295 KB

english, 2011

5

Response to oxygen and chemical properties of SnO2 thin-film gas sensors

Bogusława Adamowicz, Weronika Izydorczyk, Jacek Izydorczyk, Andrzej Klimasek, Wiesław Jakubik, Janusz Żywicki

Journal:

Year:

2008

Language:

english

File:

PDF, 324 KB

english, 2008

6

Analysis of photoluminescence efficiency and surface recombination velocity of MBE-grown AlGaAs layers

Boguslawa Adamowicz, Hideki Hasegawa

Journal:

Thin Solid Films

Year:

2000

Language:

english

File:

PDF, 254 KB

english, 2000

7

Computer analysis of photon-induced non-equilibrium phenomena at Si and AlGaAs surfaces

Boguslawa Adamowicz, Hideki Hasegawa

Journal:

Year:

2000

Language:

english

File:

PDF, 349 KB

english, 2000

8

Computer simulations of the surface photovoltage on Si and GaAs surfaces with U-shaped surface state continuum

Boguslawa Adamowicz, Hideki Hasegawa

Journal:

Year:

1999

Language:

english

File:

PDF, 304 KB

english, 1999

9

Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer

Boguslawa Adamowicz, Kengo Ikeya, Morimichi Mutoh, Toshiya Saitoh, Hajime Fujikura, Hideki Hasegawa

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

1998

Language:

english

File:

PDF, 188 KB

english, 1998

10

Computer analysis of an influence of oxygen vacancies on the electronic properties of the SnO2 surface and near-surface region

Weronika Izydorczyk, Boguslawa Adamowicz, Marcin Miczek, Krzysztof Waczynski

Journal:

physica status solidi (a)

Year:

2006

Language:

english

File:

PDF, 219 KB

english, 2006

11

Simulations of Capacitance–Voltage–Temperature Behavior of Metal/Insulator/AlGaN and Metal/Insulator/AlGaN/GaN Structures

Miczek, Marcin, Adamowicz, Bogusława, Mizue, Chihoko, Hashizume, Tamotsu

Journal:

Japanese Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 265 KB

english, 2009

12

AIP Conference Proceedings [AIP THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012 - Zurich, Switzerland (29 July–3 August 2012)] - A novel method for the determination of the full energetic distribution of interface state density in metal/insulator/GaN structures from capacitance - voltage and photocapacitance - light intensity measurements

Matys, Maciej, Adamowicz, Boguslawa, Hashizume, Tamotsu

Year:

2013

Language:

english

File:

PDF, 534 KB

english, 2013

13

Impact of Interface States and Bulk Carrier Lifetime on Photocapacitance of Metal/Insulator/GaN Structure for Ultraviolet Light Detection

Bidzinski, Piotr, Miczek, Marcin, Adamowicz, Boguslawa, Mizue, Chihoko, Hashizume, Tamotsu

Journal:

Japanese Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 1.47 MB

english, 2011